Electrical Engineer Test Part-4

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20 Questions - Developed by: - Developed on: - 339 taken

Electrical Engineer Test Part-4 (V-1.7) (Question: 61-80)

  • 1
    6. In bipolar transistor, the current is due to _____
  • 2
    7. BJT is _____ controlled device.
  • 3
    8. The types of bipolar junction transistor are.
  • 4
    9. The middle region of transistor is called
  • 5
    10. The process by which impurities are added to a pure semiconductor is:
  • 6
    11. Base of the transistor is always ___ and ____doped
  • 7
    12. The collector of a transistor is ___ doped
  • 8
    13. In a transistor the collector region is larger than the emitter region for ______
  • 9
    14. Doping concentration is the highest in _____ in a BJT.
  • 10
    15. The ___ region has highest thickness than all other regions in a BJT.
  • 11
    16. The arrow in transistor symbol indicates the direction of ____
  • 12
    17. The arrow in the transistor symbol indicates ____ terminal
  • 13
    18 Transistor has ___pn junction
  • 14
    19 The depletion region a emitter junction in an unbiased transistor extends more into the region
  • 15
    20. The depletion region at collector junction in an unbiased transistor extends more into the base
    Region because it is __ doped
  • 16
    21. Barrier voltage is ___ on the N side.
  • 17
    22. __ of electrons and holes in the base region constitutes the base current.
  • 18
    23. ___ constitutes the dominant current in a npn transistor.
  • 19
    24. ___ is the highest current in any bipolar transistor.
  • 20
    25. The ___ current of a transistor is neither the largest nor the smallest.

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